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IXTA220N04T2-7
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-263 (7-lead) (IXTA..7) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 20V, I D = 50A
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
40
66
6820
1185
250
15
21
31
21
112
33
30
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42 ° C/W
Pins: 1 - Gate
2, 3 - Source
4 - Drain
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
5,6,7 - Source
Tab (8) - Drain
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse width limited by T JM
I F = 50A, V GS = 0V, Note 1
I F = 110A, V GS = 0V
-di/dt = 100A/ μ s
V R = 20V
45
1.4
32
220
660
1.0
A
A
V
ns
A
nC
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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